Abstract

Thin films of nickel chalcogenide, NiX₂ (X= S, Se) have been electrosynthesized on indiumtin-oxide (ITO) coated glass substrates. The films were characterized for their structural, morphological and compositional characteristics. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals that the films were adherent to the substrate with uniform and pin-hole free. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Ni, S, and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of p-type material. 

Keywords

chalcogenides, thin films, electrochemical techniques, optical properties