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Formation of emission in diode lasers with evaporation of various impurities on the main semiconductor crystal having affinity to electron


Abstract

The introduction contains a summary of modern provisions that make it impossible to interpret many phenomena occurring in diode laser systems on the basis of commonly accepted physical conceptions. The work demonstrates their inadequacy.

Keywords

negative ion, energy of affinity, n-conductivity, p-conductivity, n-p-conductivity, heterostructure, diode laser

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